Semiconductor nanostructures analysis

The project investigated the controlled synthesis and optical properties of II-VI semiconductor nanostructures, focusing on zinc and cadmium chalcogenides. These materials possess direct band gaps and high fluorescence yields, making them suitable for applications in LEDs and photodetectors. However, limitations in current wafer fabrication methods hinder practical use. By employing nanotechnology, the project significantly enhanced optical properties and reduces defect densities. It also examined the integration of diverse chemical compositions into hierarchical nanostructures and explored controllable doping to tailor optical characteristics. Results indicated substantial improvements in photocurrent and photoluminescence, with CdS nanoribbons demonstrating a conductance increase by four orders of magnitude and faster photoresponse times compared to conventional films. These advancements underscored the potential of II-VI semiconductor nanostructures for developing high-sensitivity and high-speed nanoscale devices, suggesting their promise for future optoelectronic technologies.