Resistive memory technologies
Enhancing high-speed data with reliable resistive memory for big-data applications.
Real time access to vast data is crucial in today's information technology, necessitating high-speed non-volatile memories for efficient throughput and energy use. Recent advances in artificial intelligence require systems based on resistive non-volatile memory for real-time decision support, moving away from traditional flash memories. However, developing reliable resistive non-volatile memory remains challenging due to limited understanding of material properties and switching processes. This project aimed to study the physical switching mechanisms of resistive memories, such as RRAM and CBRAM. The results will be verified using experimental data with specially designed test structures. Using the new knowledge, directors of the project from HKUST and CAS will work together to demonstrate how to improve the performance of resistive memories with material and structural design.
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Original project funded for three years from 2018
Key topics
- Atomic-level simulations
- Material properties
- Experimental validation
Directors
Man sun Chan
Chair Professor at the Hong Kong University of Science and Technology
Ming Liu
Professor Situation unknown
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